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GaN Semiconductor Devices Market Forecast 2027
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GaN Semiconductor Device Global Market - Overview
The power electronics and semiconductor market continues to nurture and increase more presence through a variety of markets. The major trend that enterprises focus on is electrification of vehicles. The adoption of electric vehicles will lead to an increase in technology development and a reduction of cost for automotive semiconductor technology. Automobile manufacturer, Lamborghini, is planning to develop electric vehicle, Terzo, (electric super sports car). Another trend in the semiconductor and power electronics market is wireless charging. Major Smartphone manufacturers like Apple and Samsung have started implementing wireless charging technology in their smartphones. The companies also claim that advancement in power electronics and semiconductor can help enterprises to efficiently improve the battery capacity and power management.
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However, reduction in the semiconductor is the key factor restraining the development of the GaN power devices market. Problems related with current association and interrelated technologies are on the rise with escalating high current density in GaN devices. The main problem consist of low impedance interconnects, higher thermal resistance and lower thermal capacitance per chip demanding more chip temperature and better thermal interconnects.
Key Players:
Some of the major players in Global GaN Semiconductor Devices Market include RF Micro Devices Incorporated (U.S.), Fujitsu Ltd.(Japan), Toshiba Corp. (Japan), Texas Instruments Inc. (U.S.), Cree Incorporated (U.S.), Aixtron SE (Germany), Mitsubishi Chemical Corporation (Japan), Koninklijke Philips N.V. (Netherlands), GaN Systems Inc. (Canada), and Epigan NV (Belgium) among others are profiled in MRFR Analysis and are at the forefront of competition in the Global GaN Semiconductor Device market.
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Industry News
December 2017, Fujitsu bonds single-crystal diamond and SiC substrate at room temperature, boosting GaN HEMT performance. The company presented the technology for room-temperature bonding of single-crystal diamond to a silicon carbide (SiC) substrate, which are both hard materials but with different coefficients of thermal expansion. The company claims that by using this technology for heat dissipation allows high-efficiency cooling of high-power gallium nitride (GaN) high-electron-mobility transistors (HEMTs), enabling stable operations of power amplifiers at high power levels. This technology was confirmed to prevent the formation of the damaged layer on the diamond surface after Ar beam exposure, resulting in improved bonding strength and hence single-crystal diamond bonded at room temperature to a SiC substrate.
December 2017, Fins boost prototype vertical GaN transistor to 1200V, sufficient for electric vehicles. Researchers from MIT, IQE, Plc, IBM and Columbia University presented a new design of GaN transistors that can handle the voltage of upto 1200V. IEEE, claims that this capacity is enough for electrical vehicles, but the challenge that these organizations face is that this is still a prototype carried out in experimental labs. IEEE believes that the capacity can further be increased upto 3500V, bringing the efficiencies of GaN to power electronics.
December 2017, Gate Dielectric Process Improves Power GaN Reliability. Toshiba has developed a gate dielectric process technology for improving the reliability of GaN power devices. Toshiba has traced the cause of variations in GaN-MOSFET threshold voltage to impurity traps within the gate dielectric, and has developed a process technology that can greatly reduce impurities in the gate dielectric. Compared with conventional technology, this greatly reduces variation in threshold voltage and delivers world-leading gate reliability. Toshiba is working on research and development with the aim of further increasing reliability in order to bring this technology into practical use.
December 2017, US Researchers Make Flexible GaN Chips. Scientists at the US Air Force Research Laboratory have discovered a new way to grow and transfer GaN onto a flexible substrate, laying the groundwork for 5th generation, high speed, and agile communication systems of the future. The new AFRL method of GaN production takes advantage of the physical properties of boron nitride. Scientists grow the GaN on the BN, and then due to weak chemical bonds between the BN and the growing surface, they can then lift and transfer the apparatus to another substrate, enabling communication capability on unique platforms and devices
GaN Semiconductor Device Global Market - Segmentation
Segmentation by type: Opto-semiconductor, power semiconductor.
Segmentation by device: transistor, diode, rectifier, power IC’s, amplifier and switching system.
Segmentation by application: Consumer Electronics, Automotive, Aerospace and Defence, Telecommunication, medical, power conditioner
Segmentation by Region: North America, Europe, Asia Pacific, rest of the world.
GaN Semiconductor Device Global Market - Regional Analysis
The geographical analysis of the GaN semiconductor market covers regions like North America, Europe, Asia Pacific and rest of the world. Among these regions, the North-America dominates the GaN semiconductor devices market. This growth is mainly due to high penetration of GaN semiconductor in aerospace & defence sectors, medical, and automotive sectors. GaN semiconductor devices market in Asia-Pacific is expected to grow at a fast pace during the forecast period. In Asia Pacific, the Japan continues to dominate the market of GaN semiconductor.
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